Sensor structure having layer with high magnetic moment

ABSTRACT

A reader sensor having a composite shield and a sensor stack. The composite shield includes a high magnetic moment layer having a magnetic moment greater than 1.0 T, a low magnetic moment layer, and a spacer therebetween. The high magnetic moment layer is closer to the stack than the low magnetic moment layer. The high magnetic moment layer may be a single layer or have a plurality of layers.

CROSS REFERENCE

This application is a divisional application of U.S. application Ser.No. 14/486,827, filed Sep. 15, 2014, now issued as U.S. Pat. No.9,269,381, the entire disclosures of which are incorporated herein byreference.

BACKGROUND

In a magnetic data storage and retrieval system, a magnetic read/writehead includes a reader portion having a magnetoresistive (MR) sensor forretrieving magnetically encoded information stored on a magnetic disc.Magnetic flux from the surface of the disc causes rotation of themagnetization vector of a sensing layer of the MR sensor, which in turncauses a change in electrical resistivity of the MR sensor. The changein resistivity of the MR sensor can be detected by passing a currentthrough the MR sensor and measuring a voltage across the MR sensor.External circuitry then converts the voltage information into anappropriate format and manipulates that information to recover theinformation encoded on the disc.

SUMMARY

One particular implementation described herein is a reader sensor havinga sensor stack and a composite shield. The composite shield includes ahigh magnetic moment (HMM) layer having a magnetic moment greater than1.0 T, a low magnetic moment (LMM) layer, and a spacer therebetween,wherein the HMM layer is closer to the stack than the LMM layer.

Another particular implementation is a reader sensor having a topshield, a bottom shield, and a sensor stack between the top shield andto the bottom shield. At least one of the top shield and the bottomshield includes a reference layer having a high magnetic moment greaterthan 1.0 T, a pinned layer having a magnetic moment no greater than 1.0T, and a spacer therebetween. The reference layer is closer to the stackthan the pinned layer.

Yet another particular implementation is a reader sensor having a topshield, a bottom shield. and a sensor stack between the top shield andthe bottom shield. One of the top shield or the bottom shield comprisesa reference layer, a pinned layer, a spacer between the reference layerand the pinned layer, and a high magnetic moment (HMM) layermagnetically coupled to the reference layer. The HMM layer is closer tothe one of the top shield or the bottom shield than the reference layer.

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used to limit the scope of the claimed subject matter. These andvarious other features and advantages will be apparent from a reading ofthe following detailed description.

BRIEF DESCRIPTIONS OF THE DRAWING

The described technology is best understood from the following DetailedDescription describing various implementations read in connection withthe accompanying drawings.

FIG. 1 is a perspective view of an example recording device using areader having a sensor structure disclosed herein.

FIG. 2 is a schematic an air-bearing surface (ABS) view of an examplereader sensor structure.

FIG. 3 is a schematic an air-bearing surface (ABS) view of an examplereader sensor structure.

FIG. 4 is a schematic an air-bearing surface (ABS) view of an examplereader sensor structure.

FIG. 5 is a schematic an air-bearing surface (ABS) view of an examplereader sensor structure.

FIG. 6 is a graphical representation of the effect of the magneticmoment of a material and its thickness on PW50.

FIG. 7 is a graphical representation of the effect of the magneticmoment of a material, its thickness, and its inclusion with othermaterials on PW50.

FIG. 8 is a flowchart illustrating an example method of forming anexample reader sensor structure.

FIG. 9 is a flowchart illustrating an example method of forming anexample reader sensor structure.

DETAILED DESCRIPTION

There is an increasing demand for high data densities and sensitivesensors to read data from a magnetic media. Giant Magnetoresistive (GMR)sensors that have increased sensitivity consist of two soft magneticlayers separated by a thin conductive, non-magnetic spacer layer such ascopper. Tunnel Magnetoresistive (TMR) sensors provide an extension toGMR in which the electrons travel with their spins orientedperpendicularly to the layers across a thin insulating tunnel barrier.An antiferromagnetic (AFM) material (often called a “pinning layer”) isplaced adjacent to the first soft magnetic layer to prevent it fromrotating. With its rotation inhibited, the first soft layer is termedthe “pinned layer” (PL). AFM materials exhibiting this pinning propertyare termed “pinning materials”. The second soft magnetic layer rotatesfreely in response to an external field and is called the “free layer”(FL).

To operate the MR sensor properly, the sensor is preferably stabilizedagainst the formation of edge domains because domain wall motion resultsin electrical noise that makes data recovery difficult. A common way toachieve stabilization is with a permanent magnet abutted junctiondesign. In this scheme, permanent magnets with high coercive field(i.e., hard magnets) are placed at each end of the sensor. The fieldfrom the permanent magnets stabilizes the sensor and prevents edgedomain formation, as well as provides proper bias. In order to increasethe stiffness of the PL, a synthetic antiferromagnetic (SAF) material isused in the PL. The use of the AFM/PL allows for consistent andpredictable orientation of the SAF structure. Furthermore, the use ofthe AFM/PL also provides stable structure to enable high amplitudelinear response for a reader using the MR sensor.

The assembly of the various layers the GMR/TMR sensors, as discussedabove, is also referred to as a sensor stack. Such sensor stack may besurrounded by a bottom shield and a top shield to shield the sensor fromany magnetic influences that are generated from other components of thetransducer head; these shields can be referred to as bulk shields. Insuch an implementation, the distance between the top shield and thebottom shield is referred to as the shield-to-shield spacing (SSS).PW50, which is the pulse width of a magnetic element at 50% of the pulseamplitude, is indicative of the spatial resolution of the sensor. Thepulse width PW50 of magnetic sensors, which determine thesignal-to-noise (SNR) ratio in a recording system, depend on the SSS ofthe head. Specifically, a reduction in the SSS leads to reduction in thevalue of the PW50 and therefore, an increase in the value of the SNR forthe recording system. However, using SSS reduction to achieve lower PW50has its limits.

The PW50 performance of a shield can be improved by increasing itsmagnetic moment. However, higher-moment materials tend to have highercoercivity and magnetic non-uniformity, which creates shield instabilityand a decrease in the SNR. A top shield has two main functions:shielding for PW50 and MT metrics improvement, and support of the sideshields. However, supporting the side shields precludes PW50 reductionby using thin layers decoupled from the bulk shields.

An example sensor assembly disclosed herein provides PW50 improvementwhile having shield material coercivity and magnetic non-uniformitysignificantly less than in a high-moment shield. Specifically an examplesensor assembly disclosed herein provides alternative methods forreducing the PW50 of a sensor without reducing the SSS of the sensor andwithout increasing significantly the coercivity and magneticnon-uniformity of the shields. Specifically, the sensor assemblyincludes a reader sensor or “stack” surrounded by a bottom shield and atop shield in down-track direction, where one of the shields has alayer, magnetically coupled to the rest of the shield, having a highmagnetic moment (higher than 1.0 T) close to the sensor stack. Byproviding a high magnetic moment material close to the sensor stack, thestability of the sensor is maintained, due to a small increase incoercivity and magnetic non-uniformity, if any, while the PW50 of thesensor stack is greatly decreased. The result is improved SNR of therecording system using such sensor assembly.

It is noted that the technology disclosed herein may be used inconjunction with a variety of different types of magnetic sensors (e.g.,anisotropic magnetoresistive (AMR) sensors, TMR sensors, GMR sensors,etc.). Accordingly, the implementations discussed may also be applicableto new sensor designs that are based on new physical phenomena such aslateral spin valve (LSV), spin-hall effect (SHE), spin torqueoscillation (STO), etc.

In the following description, reference is made to the accompanyingdrawing that forms a part hereof and in which are shown by way ofillustration at least one specific implementation. The followingdescription provides additional specific implementations. It is to beunderstood that other implementations are contemplated and may be madewithout departing from the scope or spirit of the present disclosure.The following detailed description, therefore, is not to be taken in alimiting sense. While the present disclosure is not so limited, anappreciation of various aspects of the disclosure will be gained througha discussion of the examples provided below. In some instances, areference numeral may have an associated sub-label consisting of alower-case letter to denote one of multiple similar components. Whenreference is made to a reference numeral without specification of asub-label, the reference is intended to refer to all such multiplesimilar components.

FIG. 1 illustrates a perspective view of an example recording device 100using a reader disclosed herein. Recording device 100 includes a disc102, which rotates about a spindle center or a disc axis of rotation 104during operation. The disc 102 includes an inner diameter 106 and anouter diameter 108 between which are a number of concentric data tracks110, illustrated by circular dashed lines. The data tracks 110 aresubstantially circular and are made up of regularly spaced patternedbits 112, indicated as dots or ovals on the disc 102. It should beunderstood, however, that the described technology may be employed withother types of storage media, including continuous magnetic media,discrete track (DT) media, etc.

Information may be written to and read from the bits 112 on the disc 102in different data tracks 110. A transducer head 124 is mounted on anactuator assembly 120 at an end distal to an actuator axis of rotation122 and the transducer head 124 flies in close proximity above thesurface of the disc 102 during disc operation. The actuator assembly 120rotates during a seek operation about the actuator axis of rotation 122positioned adjacent to the disc 102. The seek operation positions thetransducer head 124 over a target data track of the data tracks 110.

An exploded view 140 illustrates an expanded view of the transducer head124, with a reader sensor 150 illustrated by a schematic block diagramthat illustrates an air-bearing surface (ABS) view of the reader sensor150. In the illustrated implementation, the reader sensor 150 isillustrated to include a top shield 152 and a bottom shield 154, with asensor stack 156 between the shields 152, 154 along the down-trackdirection of the reader 150. The top shield 152 and the bottom shield154 protect the sensor stack 156 from flux from adjacent data tracks 110on the disc 102. The details of which are not shown, sensor stack 156includes multiple layers, including a free layer that has a switchablemagnetic orientation. Also between the top shield 152 and the bottomshield 154, bounding the sensor stack 156 in the cross-track directions,are side shields 158. In accordance with this disclosure, at least oneof the top shield 152 and the bottom shield 154 is a composite shield,that includes a high magnetic moment (HMM) material that has a magneticmoment greater than 1.0 T. In some implementations, the magnetic momentis at least 1.2 T, or at least 1.4 T, or at least 1.8 T, or even atleast 2.4 T.

FIG. 2 illustrates an ABS view of an example implementation of a sensorstructure, particularly, of a reader 200. The reader 200 includes a topshield 202 and a base or bottom shield 204 around a sensor stack 206that has multiple layers, one of which is a free layer with a switchablemagnetic orientation. The particulars of the sensor stack 206 are notdetailed herein, and other layers that may be in the sensor stack 206include an AFM layer, a pinned layer, a spacer layer, a reference layer,etc.

Also between the top shield 202 and the bottom shield 204, in thecrosstrack or lateral direction to the sensor stack 206, are sideshields 208. In the illustrated implementations, the side shields 208encompass all layers of the sensor stack 206, however in otherimplementations, the side shields 208 may not encompass one or more ofthe layers that form the sensor stack 206. The side shields 208 may behard magnetic or permanent magnets (PM), and may have high magneticmoment (i.e., greater than 1.0 T) or low magnetic moment (i.e., 1.0 T orless). The side shields 208 provide a magnetic biasing field on the freelayer in the sensor stack 206. The side shields 208 can be directlymagnetically coupled with the top shield 202.

The top shield 202 is a composite shield, composed of at least threelayers; in this implementation, the top shield 202 has a pinned layer210, a reference layer 212, a spacer 211 therebetween, and a highmagnetic moment (HMM) layer 215 having a high magnetic moment. Thepinned layer 210 is a magnetic layer that has a pinned (or not readilyswitchable) magnetic orientation, a low magnetic moment (i.e., 1.0 T orless) and low coercivity (usually on the order of a few Oersteads (Oe)),and low magnetic non-uniformity; the pinned layer 210 can be referred toas a low magnetic moment (LMM) layer. In some implementations, thereference layer 212 is a magnetic layer that also has a low magneticmoment of 1.0 T or less and a low coercivity and low magneticnon-uniformity. Together, in some implementations layers 210/211/212 arereferred to as a synthetic antiferromagnetic layer, or SAF layer.

The HMM layer 215 is magnetically coupled to the reference layer 212 andis separated from the pinned layer 210 by the spacer layer 211 and bythe reference layer 212. The HMM layer 215 is closer to the sensor stack206 than the reference layer 212, and in the illustrated implementation,the HMM layer 215 is directly in contact with and adjacent to the sensorstack 206. In some implementations, the HMM layer 215 is notmagnetically coupled to the stack 206. This can be due to a non-magneticcap layer present between the stack 206 and the HMM layer 215. In someimplementations, such a cap layer extends across the sensor stack 206and the side shields 208, so that the side shields 208 contact the caplayer.

As indicated above, the HMM layer 215 is formed from a magnetic materialhaving a magnetic moment greater than 1.0 T. In some implementations,the magnetic moment of the HMM layer 215 is at least 1.2 T, or at least1.4 T, or at least 1.8 T, or even at least 2.4 T. General examples ofhigh magnetic moment alloys include FeCo, FeCoN, FeSi, and FeC.Particular examples of high magnetic moment alloys includeFe₄₄₋₄₆Co₃₉₋₄₂Ni_(14.5-15) (2.1 T), Fe₅₄₋₅₆Ni₂₇₋₂₉Co₁₆₋₁₈ (1.8 T),Fe₈₆₋₉₀Cr₁₀₋₁₄ (1.8 T), Fe₅₂₋₆₂Co₂₆₋₃₆Cr₁₀₋₁₄ (1.9 T), Ni₄₀₋₆₀Fe₅₀₋₆₀including Ni₄₅Fe₅₅ (1.6 T), and “sendust” (Al_(5.4)Fe₆₅Si_(9.6) (1.1T)), where the subscripts indicate the range of atomic percentages foreach element in the alloy. “Permalloy” (Ni₈₁Fe₁₉) is not a high magneticmoment material, as it has a magnetic moment of 1.0 T.

The HMM layer 215 may have a coercivity (e.g., a few tens of Oersteads)similar to or slightly higher than the coercivity of the pinned layer210. The HMM layer 215 is sufficiently thin so that the SSS is increasedslightly, if at all, over a comparable structure having no HMM layer.Because it is thin, its contribution to the total coercivity of the topshield 202 is relatively low. In some implementations, the HMM layer 215has a thickness of at least 1 nm and in other implementations at least 2nm. The HMM layer 215 is, in some implementations, no greater than 50 nmthick and in other implementations no greater than 30 nm. Examplethicknesses of a discrete HMM layer, such as MEW layer 215, include 1nm, 2 nm, 4 nm, 6 nm, 10 nm, 20 nm, and 30 nm.

The HMM layer 215 improves the PW50 of the reader 200 because thecoercivity of the entire top shield 202 is the weighted average of thecoercivity of the HMM layer 215 versus the rest of the top shield 202(e.g., the pinned layer 210, the spacer layer 211 and the referencelayer 212). The coercivity and magnetic non-uniformity of the shield 202is increased minimally by the addition of the MEW layer 215, whereas thePW50 improves (i.e., decreases) significantly. The improved PW50increases the capability of the sensor 200 to read data with higherlinear density, thus allowing a recording device using the sensor 200 toprovide higher linear data density and thus more cost effective datastorage capabilities.

The particulars of the specific construction of the reader sensor 200are not of particular relevance to composite shield and the HMM layer inthe reader sensor 200, and a detailed discussion of the other elementsof sensor 200 is not provided herein.

FIG. 3 illustrates another schematic block diagram of an ABS view of anexample implementation of a reader 300. Various elements or features ofreader 300 are the same as or similar to the corresponding element orfeature of reader 200, unless indicated otherwise. The reader 300includes a top shield 302 and a base or bottom shield 304 around asensor stack 306. Also between the top shield 302 and the bottom shield304, in the crosstrack or lateral direction to the sensor stack 306, areside shields 308.

Similar to the previous figure, the top shield 302 is a compositeshield, composed of at least three layers; however in thisimplementation, the top shield 302 has a pinned layer 310, a spacerlayer 311, and a reference layer 315 having a high magnetic moment. Thecomposite HMM/reference layer 315 has a magnetic moment greater than 1.0T, and is formed from a mixture or combination (e.g., an alloy) of amagnetic material having a magnetic moment greater than 1.0 T and asecond magnetic material having a magnetic moment of 1.0 T or less. Theratio of the materials should be such that the resulting material has amagnetic moment greater than 1.0 T, in some implementations, at least1.2 T, or at least 1.4 T, or at least 1.8 T, or even at least 2.4 T.

In other implementations, the HMM/reference layer 315 is a mixture orcombination (e.g., an alloy) of multiple magnetic materials, at leastone of which has a magnetic moment greater than 1.0 T. The pinned layer310 is a low magnetic moment (LMM) layer, having a magnetic moment nogreater than 1.0 T.

The HMM/reference layer 315 typically has a thickness similar to orequal to the thickness the reference layer would be if no HMM materialwere present. In some implementations, the HMM/reference layer 315 has athickness of at least 5 nm, 10 nm, 20 nm and in other implementations atleast 30 nm.

The HMM/reference layer 315 is separated from the pinned layer 310 bythe spacer layer 311. The HMM/reference layer 315 is closer to thesensor stack 306 than the pinned layer 310, and in the illustratedimplementation, the HMM/reference layer 315 is directly in contact withand adjacent to the senor stack 306. The HMM/reference layer 315 is notmagnetically coupled to the sensor stack 306.

FIG. 4 illustrates another schematic block diagram of an ABS view of anexample implementation of a reader 400. Various elements or features ofreader 400 are the same as or similar to the corresponding element orfeature of readers 200, 300, unless indicated otherwise. This reader 400includes a top shield 402 and a base or bottom shield 404 around asensor stack 406. Also between the top shield 402 and the bottom shield404, in the crosstrack or lateral direction to the sensor stack 406, areside shields 408.

In this implementation, the bottom shield 404 is a composite shield,composed of at least three layers; in this implementation, the bottomshield 404 has a pinned layer 410, a reference layer 412, a spacer layer411 therebetween, and a HMM layer 415 having a high magnetic moment. TheHMM layer 415 has a magnetic moment greater than 1.0 T, whereas thepinned layer 410 has a low magnetic moment (LMM) no greater than 1.0 T.

The HMM layer 415 is magnetically coupled to the reference layer 412 andis separated from the pinned layer 410 by the spacer layer 411 and bythe reference layer 412. The HMM layer 415 is closer to the sensor stack406 than the pinned layer 410 and the reference layer 412, and in theillustrated implementation, the HMM layer 415 is directly in contactwith and adjacent to the sensor stack 406.

FIG. 5 illustrates another schematic block diagram of an ABS view of anexample implementation of a reader 500. Various elements or features ofreader 500 are the same as or similar to the corresponding element orfeature of readers 200, 300, 400, unless indicated otherwise. The reader500 includes a top shield 502 and a base or bottom shield 504 around asensor stack 506. Also between the top shield 502 and the bottom shield504, in the crosstrack or lateral direction to the sensor stack 506, areside shields 508.

Similar to the previous figure, the bottom shield 504 is a compositeshield, composed of at least three layers; however in thisimplementation, the bottom shield 504 has a pinned layer 510, a spacerlayer 511, and a reference layer 515 having a high magnetic moment. TheHMM/reference layer 515 has a magnetic moment greater than 1.0 T, and isformed from a mixture or combination (e.g., an alloy) of multiplematerials, at least one of which has a magnetic moment greater than 1.0T. The pinned layer 510 is a low magnetic moment (LMM) layer, having amagnetic moment no greater than 1.0 T.

The HMM/reference layer 515 is separated from the pinned layer 510 bythe spacer layer 511. The HMM/reference layer 515 is closer to thesensor stack 506 than the pinned layer 510, and in the illustratedimplementation, the HMM/reference layer 515 is in direct contact withand adjacent to the sensor stack 506.

Various implementations of reader sensors were modeled, with a sensorstack having a 30 nm thick pinned layer and a reference layer and HMMlayer that both varied in thickness. FIG. 6 shows the theoreticalimprovement (i.e., reduction) of PW50 due to the HMM material proximateto the sensor stack and directly magnetically coupled to the rest of thecomposite shield. The baseline sensor had a 30 nm reference layer withno HMM layer. The modeled sensor stacks were: 26 nm reference layer+4 nmHMM, 24 nm reference layer+6 nm HMM, 20 nm reference layer+10 nm HMM, 12nm reference layer+18 nm HMM, and 4 nm reference layer+26 nm HMM. TwoHMM materials were used for the models, a 1.8 T HMM and a 2.4 T HMM. Asanother baseline, a 1.0 T material was used.

As can be seen in FIG. 6, presence of the HMM layer reduces the PW50.The PW50 improves as the magnetic moment increased (i.e., 1.0 T versus1.8 T versus 2.4 T). For example, a 10 nm HMM (1.8 T) improves the PW50by 0.6 nm, and a 10 nm HMM (2.4 T) improves the PW50 by 0.9 nm. The PW50also improves as the thickness of the HMM layer increases. For example,a 10 nm HMM (2.4 T) improves the PW50 by 0.9 nm and an 18 nm HMM (2.4 T)improves the PW50 by 1.2 nm. Decreased PW50 improves linear densitycapabilities of the reader.

Having the HMM alloyed with a lower magnetic moment material, as in theimplementations shown and described in respect to FIGS. 3 and 5, alsoimproves the PW50, although not as much as a discrete layer of HMM. Ascan be seen in FIG. 7, the PW50 decreases with both a discrete HMM layeror an HMM alloy layer, although the discrete HMM layer reduces PW50 moreeffectively.

A composite shield, either top shield or bottom shield, having a layerwith a high magnetic moment greater than 1.0 T, improves PW50 whileproviding acceptable increase in coercivity and magnetic non-uniformity,all which enhances linear density capabilities of the reader.

All of the read sensors described above, readers 200, 300, 400, 500 andvariations thereof, can be fabricated by conventional methods, includingplating, deposition, etching, milling, and other conventional processingtechniques.

In reference now to FIG. 8, a flowchart illustrates an example methodfor forming a read sensor having a composite top shield with a discreteHMM layer, such as the sensor 200 of FIG. 2. The method involvesoperation 802 of forming a bottom shield layer on a substrate. Thisoperation does not require forming the bottom shield directly on thesubstrate, as intervening materials/layers may be present between thebottom shield and substrate. A sensor stack is formed on the bottomshield in operation 804. This operation does not require forming thesensor stack directly on the substrate, as intervening materials/layersmay be present between the bottom shield and sensor stack. In operation806, side shields are formed on the bottom shield around the sensorstack. A composite top shield is formed on the sensor stack inoperations 808 through 812. In operation 808, a layer of HMM material(i.e., having a magnetic moment of greater than 1.0 T) is formed. Inthis particular method, the HMM layer is formed directly on and incontact with the sensor stack. In operation 810, a reference layer isformed, in this particular method, on and in contact with the MINIlayer. A spacer layer and then a pinned layer are formed in operation812 on the reference layer.

An alternate example method for forming a read sensor is illustrated inFIG. 9, the read sensor having a composite top shield with an alloy HMMlayer, such as the sensor 300 of FIG. 3. The method involves operation902 of forming a bottom shield layer on a substrate. This operation doesnot require forming the bottom shield directly on the substrate, asintervening materials/layers may be present between the bottom shieldand substrate. A sensor stack is formed on the bottom shield inoperation 904. This operation does not require forming the sensor stackdirectly on the substrate, as intervening materials/layers may bepresent between the bottom shield and sensor stack. In operation 906,side shields are formed on the bottom shield around the sensor stack. Acomposite top shield is formed on the sensor stack in operations 908through 910. In operation 908, a HMM layer (i.e., having a magneticmoment of greater than 1.0 T) is formed; the HMM layer is composed ofmultiple magnetic materials, at least one of which has a magnetic momentgreater than 1.0 T. In this particular method, the HMM layer is formeddirectly on and in contact with the sensor stack. In operation 910, aspacer layer and then a pinned layer are formed on the reference layer.

The above specification and examples provide a complete description ofthe structure and use of exemplary implementations of the invention. Theabove description provides specific implementations. It is to beunderstood that other implementations are contemplated and may be madewithout departing from the scope or spirit of the present disclosure.The above detailed description, therefore, is not to be taken in alimiting sense. While the present disclosure is not so limited, anappreciation of various aspects of the disclosure will be gained througha discussion of the examples provided.

Unless otherwise indicated, all numbers expressing feature sizes,amounts, and physical properties are to be understood as being modifiedby the term “about.” Accordingly, unless indicated to the contrary, thenumerical parameters set forth are approximations that can varydepending upon the desired properties sought to be obtained by thoseskilled in the art utilizing the teachings disclosed herein.

As used herein, the singular forms “a”, “an”, and “the” encompassimplementations having plural referents, unless the content clearlydictates otherwise. As used in this specification and the appendedclaims, the term “or” is generally employed in its sense including“and/or” unless the content clearly dictates otherwise.

Spatially related terms, including but not limited to, “bottom,”“lower”, “top”, “upper”, “beneath”, “below”, “above”, “on top”, “on,”etc., if used herein, are utilized for ease of description to describespatial relationships of an element(s) to another. Such spatiallyrelated terms encompass different orientations of the device in additionto the particular orientations depicted in the figures and describedherein. For example, if a structure depicted in the figures is turnedover or flipped over, portions previously described as below or beneathother elements would then be above or over those other elements.

Since many implementations of the invention can be made withoutdeparting from the spirit and scope of the invention, the inventionresides in the claims hereinafter appended. Furthermore, structuralfeatures of the different implementations may be combined in yet anotherimplementation without departing from the recited claims.

What is claimed is:
 1. A reader sensor comprising: a sensor stack; and acomposite shield including: a reference layer having a magnetic momentgreater than 1.0 T, the reference layer comprising a first magneticmaterial having a magnetic moment greater than 1.0 T and a secondmagnetic material having a magnetic moment of 1.0 T or less, a pinnedlayer having a magnetic moment no greater 1.0 T, and a spacer betweenthe reference layer and the pinned layer, wherein the reference layer isin contact with and adjacent to the sensor stack.
 2. The reader sensorof claim 1, wherein the composite shield is a top shield.
 3. The readersensor of claim 1, wherein the composite shield is a bottom shield. 4.The reader sensor of claim 1, wherein the reference layer comprises analloy of the first magnetic material and the second magnetic material.5. The reader sensor of claim 1, wherein the reference layer comprises amixture of the first magnetic material and the second magnetic material.6. The reader sensor of claim 1, wherein the reference layer has athickness of at least 10 nm.
 7. The reader sensor of claim 1, whereinthe reference layer has a thickness of at least 20 nm.
 8. The readersensor of claim 1, wherein the reference layer has a magnetic moment ofat least 1.2 T.
 9. The reader sensor of claim 1, wherein the firstmagnetic material has a magnetic moment of at least 1.2 T.
 10. Thereader sensor of claim 1, wherein the first magnetic material has amagnetic moment of at least 1.4 T.
 11. A reader sensor comprising: a topshield; a bottom shield; and a sensor stack between the top shield andthe bottom shield; wherein one of the top shield or the bottom shieldcomprises: a reference layer having a magnetic moment greater than 1.0T, the reference layer comprising a first magnetic material having amagnetic moment greater than 1.0 T and a second magnetic material havinga magnetic moment of 1.0 T or less, a pinned layer having a magneticmoment no greater 1.0 T, and a spacer between the reference layer andthe pinned layer, wherein the reference layer is closer to the sensorstack than is the pinned layer.
 12. The reader sensor to claim 11,wherein the reference layer is in contact with and adjacent to thesensor stack.
 13. The reader sensor of claim 11, wherein the referencelayer comprises an alloy of the first magnetic material and the secondmagnetic material.
 14. The reader sensor of claim 11, wherein thereference layer comprises a mixture of the first magnetic material andthe second magnetic material.
 15. The reader sensor of claim 11, whereinthe reference layer has a thickness of at least 10 nm.
 16. The readersensor of claim 11, wherein the reference layer has a magnetic moment ofat least 1.2 T.
 17. The reader sensor of claim 11, wherein the firstmagnetic material has a magnetic moment of at least 1.2 T.
 18. Thereader sensor of claim 11, wherein the first magnetic material has amagnetic moment of at least 1.4 T.